검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
A novel technique for shallow angle beveling of SiC to prevent surface breakdown in power devices Merrett JN, Sheridan DC, Williams Jr, Tin CC, Cressler JD Materials Science Forum, 353-356, 623, 2001 |
| 2 |
Design and characterization of 2.5kV 4H-SiC JBS rectifiers with self-aligned guard ring termination Sheridan DC, Merrett JN, Cressler JD, Saddow SE, Williams Jr, Ellis CE, Niu G Materials Science Forum, 353-356, 687, 2001 |
| 3 |
Design of single and multiple zone junction termination extension structures for SiC power devices Sheridan DC, Niu GF, Cressler JD Solid-State Electronics, 45(9), 1659, 2001 |
| 4 |
Demonstration of deep (80 mu m) RIE etching of SIC for MEMS and MMIC applications Sheridan DC, Casady JB, Ellis EC, Siergiej RR, Cressler JD, Strong RM, Urban WM, Valek WF, Seiler CF, Buhay H Materials Science Forum, 338-3, 1053, 2000 |
| 5 |
Simulation and fabrication of high-voltage 4H-SiC diodes with multiple floating guard ring termination Sheridan DC, Niu G, Merrett JN, Cressler JD, Ellis C, Tin CC, Siergiej RR Materials Science Forum, 338-3, 1339, 2000 |
| 6 |
Design and fabrication of planar guard ring termination for high-voltage SiC diodes Sheridan DC, Niu GF, Merrett JN, Cressler JD, Ellis C, Tin CC Solid-State Electronics, 44(8), 1367, 2000 |