| 1 |
Photoelectrochemical behavior of mixed ZnO and GaN (ZnO:GaN) thin films prepared by sputtering technique
Shet S, Yan YF, Ravindra N, Turner J, Al-Jassim M
Applied Surface Science, 270, 718, 2013 |
| 2 |
Effect of gas ambient and varying RF sputtering power for bandgap narrowing of mixed (ZnO:GaN) thin films for solar driven hydrogen production
Shet S, Yan YF, Turner J, Al-Jassim M
Journal of Power Sources, 232, 74, 2013 |
| 3 |
Phase separation in Ga and N co-incorporated ZnO films and its effects on photo-response in photoelectrochemical water splitting
Shet S, Ahn KS, Nuggehalli R, Yan YF, Turner J, Al-Jassim M
Thin Solid Films, 519(18), 5983, 2011 |
| 4 |
Effect of substrate temperature on the photoelectrochemical responses of Ga and N co-doped ZnO films
Shet S, Ahn KS, Wang HL, Nuggehalli R, Yan YF, Turner J, Al-Jassim M
Journal of Materials Science, 45(19), 5218, 2010 |
| 5 |
Influence of gas ambient on the synthesis of co-doped ZnO:(Al,N) films for photoelectrochemical water splitting
Shet S, Ahn KS, Deutsch T, Wang HL, Nuggehalli R, Yan YF, Turner J, Al-Jassim M
Journal of Power Sources, 195(17), 5801, 2010 |
| 6 |
Enhancement of photoelectrochemical response by aligned nanorods in ZnO thin films
Ahn KS, Shet S, Deutsch T, Jiang CS, Yan YF, Al-Jassim M, Turner J
Journal of Power Sources, 176(1), 387, 2008 |
