화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 High-reliability ONO gate dielectric for power MOSFETs
Tanimoto S, Tanaka H, Hayashi T, Shimoida Y, Hoshi M, Mihara T
Materials Science Forum, 483, 677, 2005
2 New high-voltage unipolar mode p(+) Si/n(-) 4H-SiC heterojunction diode
Hayashi T, Tanaka H, Shimoida Y, Tanimoto S, Hoshi M
Materials Science Forum, 483, 953, 2005
3 4H-SiC ACCUFET with a two-layer stacked gate oxide
Kaneko S, Tanaka H, Shimoida Y, Kiritani N, Tanimoto S, Yamanaka M, Hoshi M
Materials Science Forum, 389-3, 1073, 2002
4 Optimized P-well profile preventing punch-through for 4H-SiC power MOSFETs
Shimoida Y, Kaneko S, Tanaka H, Hoshi M
Materials Science Forum, 389-3, 1207, 2002