검색결과 : 1건
| No. | Article |
|---|---|
| 1 |
Tri-halide vapor phase epitaxy of thick GaN using gaseous GaCl3 precursor Murakami H, Takekawa N, Shiono A, Thieu QT, Togashi R, Kumagai Y, Matsumoto K, Koukitu A Journal of Crystal Growth, 456, 140, 2016 |
| No. | Article |
|---|---|
| 1 |
Tri-halide vapor phase epitaxy of thick GaN using gaseous GaCl3 precursor Murakami H, Takekawa N, Shiono A, Thieu QT, Togashi R, Kumagai Y, Matsumoto K, Koukitu A Journal of Crystal Growth, 456, 140, 2016 |