화학공학소재연구정보센터
검색결과 : 9건
No. Article
1 Optical spectroscopy as a tool for observation of porous SiC graphitization
Shuman VB, Savkina NS
Materials Science Forum, 483, 261, 2005
2 X-ray diffraction analysis of epigrowth on porous 4H-SiC substrates
Shulpina IL, Savkina NS, Shuman VB, Ratnikov VV, Syvajarvi M, Yakimova R
Materials Science Forum, 483, 265, 2005
3 X-ray imaging and TEM study of micropipes related to their propagation through porous SiC layer/SiC epilayer interface.
Argunova TS, Gutkin MY, Je JH, Sorokin LM, Mosina GN, Savkina NS, Shuman VB, Lebedev AA
Materials Science Forum, 457-460, 363, 2004
4 TEM (XHREM) and EDX studies of 6H-SiC porous layer as a substrate for subsequent homoepitaxial growth
Sorokin LM, Hutchison JL, Sloan J, Mosina GN, Savkina NS, Shuman VB, Lebedev AA
Materials Science Forum, 389-3, 271, 2002
5 Features of sublimation growth on porous SiC substrates: Characteristics and properties of porous and epitaxial layers
Savkina NS, Shuman VB, Ratnikov VV, Rogachev AY, Lebedev AA
Materials Science Forum, 433-4, 189, 2002
6 Role of the defects under porous silicon carbide formation
Savkina NS, Sorokin LM, Hutchison JL, Sloan J, Tregubova AS, Mosina GN, Shuman VB, Ratnikov VV
Applied Surface Science, 184(1-4), 252, 2001
7 Effect of sublimation growth on the structure of porous silicon carbide: SEM and X-ray diffraction investigations
Savkina NS, Ratnikov VV, Shuman VB, Lebedev AA
Materials Science Forum, 353-356, 119, 2001
8 Effect of nonlinear physical phenomena on the photovoltaic effect in silicon p(+)-n-n(+) solar cells
Mnatsakanov TT, Shuman VB, Pomortseva LI, Schroder D, Schlogl A
Solid-State Electronics, 44(3), 383, 2000
9 Diffusion from polymer spin-on films : Measurements and simulations
Ber BY, Guk EG, Kamanin AV, Kudryavtsev YA, Mokina LA, Shmidt NM, Shuman VB, Busygina LA, Yurre TA
Journal of Vacuum Science & Technology B, 16(1), 426, 1998