화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 High-k Al2O3 MOS structures with Si interface control layer formed on air-exposed GaAs and InGaAs wafers
Akazawa M, Hasegawa H
Applied Surface Science, 256(19), 5708, 2010
2 Scanned-probe topological and spectroscopic study of surface states on clean and Si-deposited GaAs (001)-c(4 x 4) surfaces
Negoro N, Kasai S, Hasegawa H
Applied Surface Science, 190(1-4), 269, 2002
3 Scanning tunneling microscopy and spectroscopy study of ultrathin Si interface control layers grown on (001) GaAs for surface passivation
Negoro N, Fujikura H, Hasegawa H
Applied Surface Science, 159, 292, 2000