화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Planar defects, voids and their relationship in 3C-SiC layers
Mendez D, Aouni A, Araujo D, Ferro G, Monteil Y, Bustarret E
Materials Science Forum, 483, 189, 2005
2 Analysis of SiC islands formation during first steps of Si carbonization process
Mendez D, Aouni A, Araujo D, Bustarret E, Ferro G, Monteil Y
Materials Science Forum, 483, 555, 2005
3 Interfacial strain and defects in Si (001) carbonisation layers for 3C-SiC hetero-epitaxy
Bustarret E, Araujo D, Mendez D, Morales FM, Pacheco FJ, Molina SI, Rochat N, Ferro G, Monteil Y
Materials Science Forum, 457-460, 277, 2004