| 1 |
Deep level defect correlated emission and Si diffusion in ZnO:Tb3+ thin films prepared by pulsed laser deposition
Kumar V, Ntwaeaborwa OM, Swart HC
Journal of Colloid and Interface Science, 465, 295, 2016 |
| 2 |
Effects of growth temperature and oxidant feeding time on residual C-and N-related impurities and Si diffusion behavior in atomic-layer-deposited La2O3 thin films
Park TJ, Sivasubramani P, Wallace RM, Kim J
Applied Surface Science, 292, 880, 2014 |
| 3 |
The diffusion of silicon atoms in stack structures of La2O3 and Al2O3
Lee WJ, Ma JW, Bae JM, Kim CY, Jeong KS, Cho MH, Chung KB, Kim H, Cho HJ, Kim DC
Current Applied Physics, 13(4), 633, 2013 |
| 4 |
Structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy
Agrawal M, Dharmarasu N, Radhakrishnan K, Ravikiran L
Thin Solid Films, 520(24), 7109, 2012 |
| 5 |
Chemical and structural characterization of barium hexaferrite films deposited on 6H-SiC with and without MgO/BaM interwoven layers
Cai ZH, Chen ZH, Goodrich TL, Harris VG, Ziemer KS
Journal of Crystal Growth, 307(2), 321, 2007 |
| 6 |
Annealing and deposition effects of the chemical composition of silicon-rich nitride
Andersen KN, Svendsen WE, Stimpel-Lindner T, Sulima T, Baumgartner H
Applied Surface Science, 243(1-4), 401, 2005 |
| 7 |
Nonlinear amplitude evolution during spontaneous patterning of ion-bombarded Si(001)
Erlebacher J, Aziz MJ, Chason E, Sinclair MB, Floro JA
Journal of Vacuum Science & Technology A, 18(1), 115, 2000 |
| 8 |
Effect of the Ti/Tin Bilayer Barrier and Its Surface-Treatment on the Reliability of a Ti/Tin/Alsicu/Tin Contact Metallization
Ouellet L, Tremblay Y, Gagnon G, Caron M, Currie JF, Gujrathi SC, Biberger M
Journal of Vacuum Science & Technology B, 14(6), 3502, 1996 |
| 9 |
Far-Infrared Photoconductive Magnetospectroscopy as a Tool for Studying Shallow Donor Concentration Profiles in Wide GaAs/AlGaAs Quantum-Wells
Chai YH, Goodhue WD, Mueller ER, Waldman J
Journal of Vacuum Science & Technology B, 13(2), 674, 1995 |
