검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Formation of high quality SiC on Si(100) at 900 degrees C using monomethylsilane gas-source MBE Nakazawa H, Suemitsu M, Asami S Materials Science Forum, 338-3, 269, 2000 |
| 2 |
Void shapes in the Si(111) substrate at the heteroepitaxial thin film Si interface Jinschek J, Kaiser U, Richter W Materials Science Forum, 338-3, 521, 2000 |