| 1 |
Uniform Surface Oxidation of an Si Substrate by a Planar Modulated Inductively Coupled Thermal Plasma with Molecular Gas Feed
Tial MKS, Tanaka Y, Maruyama Y, Tsuchiya T, Uesugi Y, Ishijima T
Plasma Chemistry and Plasma Processing, 37(3), 857, 2017 |
| 2 |
Kinetic Monte Carlo simulation of an atomistic model for oxide island formation and step pinning during etching by oxygen of vicinal Si(100)
Albao MA, Chuang FC, Evans JW
Thin Solid Films, 517(6), 1949, 2009 |
| 3 |
Growth of thin Si oxide in a cyclic oxygen plasma environment below 200 degrees C
Moon J, Kim YH, Chung CH, Lee SJ, Park DJ, Song YH
Applied Surface Science, 254(20), 6422, 2008 |
| 4 |
Integrated description for random adsorption and 2D-island growth kinetics in thin film growth: Autocatalytic-reaction model and kinetic Monte Carlo simulation
Togashi H, Enta Y, Suemitsu M
Applied Surface Science, 252(16), 5900, 2006 |
| 5 |
Gate dielectrics on strained Si/SiGe heterolayers
Maiti CK, Samanta SK, Chatterjee S, Dalapati GK, Bera LK
Solid-State Electronics, 48(8), 1369, 2004 |
| 6 |
The effect of Au thickness and annealing conditions on SiO2 formation in the Au/Si system
Julies BA, Adams D, Mayer JW
Thin Solid Films, 469-470, 282, 2004 |
| 7 |
Microscopic mechanism of interfacial reaction during Si oxidation
Akiyama T, Kageshima H
Applied Surface Science, 216(1-4), 270, 2003 |
| 8 |
Real time observation of initial thermal oxidation using O-2 gas on Si(001) surface by means of synchrotron radiation Si-2p photoemission spectroscopy
Yoshigoe A, Moritani K, Teraoka Y
Applied Surface Science, 216(1-4), 388, 2003 |
| 9 |
Autocatalytic reaction model: a phenomenology for nucleation-coalescence-growth of thin films
Suemitsu M, Togashi H, Abe T
Thin Solid Films, 428(1-2), 83, 2003 |
| 10 |
Spectroscopic ellipsometry characterization of strained interface region in thermally oxidized Si(111)
Szekeres A, Paneva A, Alexandrova S
Thin Solid Films, 343-344, 385, 1999 |
