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Surface morphology and growth mechanisms for sputtered amorphous silicon nitride thin films Yu LH, Xu JH, Dong SR, Kojima I Thin Solid Films, 516(8), 1781, 2008 |
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Investigation of SiO2/Si3N4 films prepared on sapphire by rf magnetron reactive sputtering Feng LP, Liu ZT, Li Q, Song WY Applied Surface Science, 252(12), 4064, 2006 |
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Deposition chemistry in the Cat-CVD processes of the SiH4/NH3 system Umemoto H, Morimoto T, Yamawaki M, Masuda Y, Masuda A, Matsumura H Thin Solid Films, 430(1-2), 24, 2003 |
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Fabrication of silicon-on-insulator structure with Si3N4 as buried insulating films by epitaxial layer transfer Xie XY, Zhang NL, Men C, Liu WL, Lin Q, An Z, Lin CL Journal of Crystal Growth, 245(3-4), 207, 2002 |
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Plasma nitridation of thin Si layers for GaAs dielectrics Wang Z, Diatezua DM, Park DG, Chen Z, Morkoc H, Rockett A Journal of Vacuum Science & Technology B, 17(5), 2034, 1999 |
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Electrical-Properties of Metal-Insulator-Semiconductor Structures with Silicon-Nitride Dielectrics Deposited by Low-Temperature Plasma-Enhanced Chemical-Vapor-Deposition Distributed Electron-Cyclotron-Resonance Hugon MC, Delmotte F, Agius B, Courant JL Journal of Vacuum Science & Technology A, 15(6), 3143, 1997 |