| 1 |
Effect of SiC buffer layer on flux pinning property of MgB2 tapes
Kang B, Putri WBK, Kang WN
Current Applied Physics, 19(6), 670, 2019 |
| 2 |
Determination of the thickness distribution of a graphene layer grown on a 2'' SiC wafer by means of Auger electron spectroscopy depth profiling
Gurban S, Pecz B, Menyhard M, Yakimova R
Applied Surface Science, 316, 301, 2014 |
| 3 |
Fabrication and characteristics of a surface acoustic wave UV sensor based on ZnO thin films grown on a polycrystalline 3C-SiC buffer layer
Phan DT, Chung GS
Current Applied Physics, 12(2), 521, 2012 |
| 4 |
Comparison of ZnO thin films grown on a polycrystalline 3C-SiC buffer layer by RF magnetron sputtering and a sol-gel method
Phan DT, Chung GS
Applied Surface Science, 257(8), 3285, 2011 |
| 5 |
Heteroepitaxy of ZnO film on Si(111) substrate using a 3C-SiC buffer layer
Zhu JJ, Lin BX, Sun XK, Yao R, Shi CS, Fu ZX
Thin Solid Films, 478(1-2), 218, 2005 |
| 6 |
Growth of high-quality cubic GaN on Si(001) coated with ultra-thin flat SiC by plasma-assisted molecular-beam epitaxy
Wang D, Hiroyama Y, Tamura M, Ichikawa M, Yoshida S
Journal of Crystal Growth, 216(1-4), 44, 2000 |
| 7 |
Initial growth of cubic GaN on Si(001) coated with a thin flat SiC buffer layer
Wang D, Hiroyama Y, Tamura M, Ichikawa M, Yoshida S
Journal of Crystal Growth, 220(3), 204, 2000 |
