화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Fine-grained 3C-SiC thick films prepared via hybrid laser chemical vapor deposition
Lai YF, Cheng H, Jia ZL, Li QZ, Yang MJ, Zhang S, Han MX, Tu R, Goto T, Zhang LM
Journal of the American Ceramic Society, 102(9), 5668, 2019
2 P-N junction and metal contact reliability of SiC diode in high temperature (873 K) environment
Chand R, Esashi M, Tanaka S
Solid-State Electronics, 94, 82, 2014
3 The first 4H-SiC BJT-based 20 kHz, 7HP PWM DC-to-AC inverter for induction motor control applications
Zhao JH, Zhang J, Luo Y, Hu X, Li Y, Yu H, Lai J, Alexandrov P, Fursin L, Li X, Carter J, Weiner M
Materials Science Forum, 457-460, 1137, 2004
4 Comparison of nitrogen and phosphorus implanted, planar, high-voltage 4H-SiC junction rectifiers
Chatty K, Khemka V, Chow TP, Gutmann RJ
Materials Science Forum, 338-3, 1331, 2000