검색결과 : 1건
No. | Article |
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SiC power device packaging technologies for 300 to 350 degrees C applications Johnson RW, Williams J Materials Science Forum, 483, 785, 2005 |
No. | Article |
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1 |
SiC power device packaging technologies for 300 to 350 degrees C applications Johnson RW, Williams J Materials Science Forum, 483, 785, 2005 |