검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Chemical vapor deposition graphene of high mobility by gradient growth method on an 4H-SiC (0001) substrate Liu QB, Yu C, He ZZ, Gu GD, Wang JJ, Zhou CJ, Guo JC, Gao XD, Feng ZH Applied Surface Science, 454, 68, 2018 |
| 2 |
In-plane structural anisotropy and polarized Raman-active mode studies of nonpolar AlN grown on 6H-SiC by low-pressure hydride vapor phase epitaxy Wu JJ, Okuura K, Okumura K, Miyake H, Hiramatsu K, Chen ZT, Egawa T Journal of Crystal Growth, 312(4), 490, 2010 |
| 3 |
An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application Wang XL, Chen TS, Xiao HL, Tang J, Ran JX, Zhang ML, Feng C, Hou QF, Wei M, Jiang LJ, Li JM, Wang ZG Solid-State Electronics, 53(3), 332, 2009 |
| 4 |
Determination of the average channel temperature of GaN MOSHFETs under continuous wave and periodic-pulsed RF operational conditions Deng YQ, Islam MDM, Gaevski M, Yang ZJ, Adivarahan V, Khan A Solid-State Electronics, 52(7), 1106, 2008 |
| 5 |
Cross-sectional spatially resolved cathodoluminescence study of cubic GaN films grown by metalorganic vapor phase epitaxy on free-standing (001) 3C-SiC and GaAs substrates Onuma T, Nozaka T, Yamaguchi H, Suzuki T, Chichibu SF Journal of Crystal Growth, 298, 193, 2007 |
| 6 |
Structural and optical characterization of GaN heteroepitaxial films on SiC substrates Morse M, Wu P, Choi S, Kim TH, Brown AS, Losurdo M, Bruno G Applied Surface Science, 253(1), 232, 2006 |
| 7 |
Improvement in light extraction efficiency in group III nitride-based light-emitting diodes using moth-eye structure Iwaya M, Kasugai H, Kawashima T, Iida K, Honshio A, Miyake Y, Kamiyama S, Amano H, Akasaki I Thin Solid Films, 515(2), 768, 2006 |
| 8 |
Seeded PVT growth of aluminum nitride on silicon carbide Epelbaum BM, Bickermann M, Winnacker A Materials Science Forum, 433-4, 983, 2002 |
| 9 |
Gaseous etching of 6H-SiC at relatively low temperatures Xie ZY, Wei CH, Li LY, Yu QM, Edgar JH Journal of Crystal Growth, 217(1-2), 115, 2000 |
| 10 |
Properties of transmission lines on various SiC substrates Royet AS, Cabon B, Ouisse T, Billon T Materials Science Forum, 338-3, 1267, 2000 |