검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
1-mm gate periphery AlGaN/AIN/GaN HEMTs on SiC with output power of 9.39 W at 8 GHz Wang XL, Cheng TS, Ma ZY, Hu G, Xiao HL, Ran JX, Wang CM, Luo WJ Solid-State Electronics, 51(3), 428, 2007 |
| 2 |
High temperature chemical interaction between SSiC substrates and Ag-Cu based liquid alloys in vacuo Lopez-Cuevas J, Rendon-Angeles JC, Rodriguez-Galicia JL, Herrera-Trejo M, Mendez-Nonell J Materials Science Forum, 509, 111, 2006 |
| 3 |
Surface preparation of 6H-SiC substrates by electron beam annealing Agueev OA, Avdeev SP, Svetlichnyi AM, Konakova RV, Milenin VV, Lytvyn PM, Lytvyn OS, Okhrimenko OB, Soloviev SI, Sudarshan TS Materials Science Forum, 483, 725, 2005 |
| 4 |
Large diameter 4H-SiC substrates for commercial power applications Powell AR, Leonard RT, Brady MF, Muller SG, Tsvetkov VF, Trussell R, Sumakeris JJ, Hobgood HM, Burk AA, Glass RC, Carter CH Materials Science Forum, 457-460, 41, 2004 |
| 5 |
Some comparative properties of diffusion-welded contacts to 6H and 4H silicon carbide Korolkov O, Rang T Materials Science Forum, 389-3, 941, 2002 |
| 6 |
Optimization of chamber design and rapid thermal processing regimes for SiC substrates by temperature and thermal stress distribution Agueev OA, Svetlichnyi AM, Klovo AG, Kocherov AN, Izotovs DA Materials Science Forum, 433-4, 107, 2002 |
| 7 |
Formation of large area Al contacts on 6H-and 4H-SiC substrates Korolkov O, Rang T Materials Science Forum, 353-356, 603, 2001 |
| 8 |
III-Nitride power devices - Good results and great expectations Shur M, Gaska R, Khan A Materials Science Forum, 353-356, 807, 2001 |
| 9 |
Generation and properties of semi-insulating SiC substrates Wang SP, Powell A, Redwing J, Piner E, Saxler AW Materials Science Forum, 338-3, 17, 2000 |
| 10 |
Analysis of dislocation densities and nanopipe formation in MBE-grown AlN-layers Ebling DG, Kirste L, Rattunde M, Portmann J, Brenn R, Benz KW, Tillmann K Materials Science Forum, 338-3, 1549, 2000 |