화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Carbon-terminated 3C-SiC(100) surface oxidation studied by high-resolution core level photoemission spectroscopy using synchrotron radiation
Roy J, Silly MG, Enriquez H, Soukiassian P, Crotti C, Fontana S, Perfetti P
Materials Science Forum, 457-460, 1325, 2004
2 Room temperature initial oxidation of 6H-and 4H-SiC(0001) 3x3
Amy F, Hwu Y, Brylinski C, Soukiassian P
Materials Science Forum, 353-356, 215, 2001
3 Reflection high-energy positron diffraction: Solved and unsolved problems
Kawasuso A, Kojima K, Yoshikawa M, Itoh H, Okada S, Ichimiya A
Materials Science Forum, 363-3, 445, 2001
4 Thermal removal of oxide and carbide from 6H-SiC surfaces before molecular beam epitaxial growth of GaN
Guan ZP, Cai AL, Porter H, Cabalu J, Huang S, Giedd RE
Applied Surface Science, 165(2-3), 203, 2000
5 Surface heterogeneity of passively oxidized silicon carbide particles: Hydrophobic-hydrophilic partition
Medout-Marere V, El Ghzaoui A, Charnay C, Douillard JM, Chauveteau G, Partyka S
Journal of Colloid and Interface Science, 223(2), 205, 2000