검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Arsenic-doped Ge-spiked monoemitter SiGe:C heterojunction bipolar transistors by low-temperature trisilane based chemical vapor deposition You SZ, Decoutere S, Nguyen ND, Van Huylenbroeck S, Sibaja-Hernandez A, Venegas R, Loo R, De Meyer K Thin Solid Films, 520(8), 3345, 2012 |
| 2 |
SiGe:C HBT transit time analysis based on hydrodynamic modeling using doping, composition and strained dependent SiGe:C carriers mobility and relaxation time Ramirez-Garcia E, Michaillat M, Aniel F, Zerounian N, Enciso-Aguilar M, Rideau D Solid-State Electronics, 61(1), 58, 2011 |
| 3 |
Recombination in the Ge-spiked monoemitter of the SiGe:C HBTs You SZ, Decoutere S, Sibaja-Hernandez A, Venegas R, Van Huylenbroeck S, De Meyer K Solid-State Electronics, 61(1), 81, 2011 |
| 4 |
Optimization of external poly base sheet resistance in 0.13 mu m quasi self-aligned SiGe:C HBTs You S, Van Huylenbroeck S, Nguyen ND, Sibaja-Hernandez A, Venegas R, Van Wichelen K, Decoutere S, De Meyer K Thin Solid Films, 518, S68, 2010 |
| 5 |
Implementation of a scalable VBIC model for SiGe : C HBTs Chakravorty A, Scholz RF, Knoll D, Fox A, Senapati B, Maiti CK Solid-State Electronics, 50(3), 399, 2006 |
| 6 |
Impact of lateral and vertical scaling on the reliability of a low-complexity 200 GHz SiGe : C HBT Piontek A, Choi LJ, Van Huylenbroeck S, Vanhoucke T, Hijzen E, Decoutere S Thin Solid Films, 508(1-2), 318, 2006 |
| 7 |
Selective epitaxial growth of SiGe : C for high speed HBTs Schafer H, Bock J, Stengl R, Knapp H, Aufinger K, Wurzer M, Boguth S, Rest M, Schreiter R, Meister TF Applied Surface Science, 224(1-4), 18, 2004 |
| 8 |
Characterization of Ge gradients in SiGeHBTs by AES depth profile simulation Kruger D, Penkov A, Yamamoto Y, Goryachko A, Tillack B Applied Surface Science, 224(1-4), 51, 2004 |
| 9 |
High performance SiGe : C HBTs using atomic layer base doping Tillack B, Yamamoto Y, Knoll D, Heinemann B, Schley P, Senapati B, Kruger D Applied Surface Science, 224(1-4), 55, 2004 |
| 10 |
Circuit applications of high-performance SiGe : C HBTs integrated in BiCMOS technology Winkler W, Borngraber J, Heinemann B, Rucker H, Barth R, Bauer J, Bolze D, Drews J, Ehwald KE, Grabolla T, Haak U, Hoppner W, Knoll D, Kruger D, Kuck B, Kurps R, Marschmeyer M, Richter H, Schley P, Schmidt D, Scholz R, Tillack B, Wolansky D, Wulf HE, Yamamoto Y, Zaumseil P Applied Surface Science, 224(1-4), 297, 2004 |