검색결과 : 15건
| No. | Article |
|---|---|
| 1 |
Double-polysilicon SiGe HBT architecture with lateral base link Fox A, Heinemann B, Rucker H Solid-State Electronics, 60(1), 93, 2011 |
| 2 |
Multi-finger power SiGeHBTs for thermal stability enhancement over a wide biasing range Jin DY, Zhang WR, Shen P, Xie HY, Wang Y, Zhang W, He LJ, Sha YP, Li J, Gan JN Solid-State Electronics, 52(6), 937, 2008 |
| 3 |
Numerical analysis of SiGe heterojunction bipolar phototransistor based on virtual substrate Zhang Y, Li C, Chen SY, Lai HK, Kang JY Solid-State Electronics, 52(11), 1782, 2008 |
| 4 |
Characterization of silicon-germanium heterojunction bipolar transistors degradation in silicon-germanium BiCMOS technologies Lee SY, Park CW Solid-State Electronics, 50(3), 333, 2006 |
| 5 |
Review of SiGeHBTs on SOI Mitrovic IZ, Buiu O, Hall S, Bagnall DM, Ashburn P Solid-State Electronics, 49(9), 1556, 2005 |
| 6 |
SiGe-collector trench gate insulated gate bipolar transistor fabricated using multiple target sputtering Kudoh T, Asano T Solid-State Electronics, 49(12), 2006, 2005 |
| 7 |
Si/SiGe heterojunction collector for low loss operation of Trench IGBT Kudoh T, Asano T Applied Surface Science, 224(1-4), 399, 2004 |
| 8 |
SiGe resonance phase transistor: active transistor operation beyond the transit frequency f(T) Kasper E, Eberhardt J, Jorke H, Luy JF, Kibbel H, Dashiell MW, Schmidt OG, Stoffel M Solid-State Electronics, 48(5), 837, 2004 |
| 9 |
Electric field effects associated with the backside Ge profile in SiGeHBTs Zhang G, Cressler JD, Lanzerotti L, Johnson R, Jin ZR, Zhang SM, Niu GF, Joseph A Solid-State Electronics, 46(5), 655, 2002 |
| 10 |
Numerical modeling of parasitic barrier formation at the SiGe/Si heterojunction due to p-n junction displacement Breed A, Roenker KP, Todorova D Solid-State Electronics, 46(12), 2199, 2002 |