검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Double-polysilicon SiGe HBT architecture with lateral base link Fox A, Heinemann B, Rucker H Solid-State Electronics, 60(1), 93, 2011 |
| 2 |
Multi-finger power SiGeHBTs for thermal stability enhancement over a wide biasing range Jin DY, Zhang WR, Shen P, Xie HY, Wang Y, Zhang W, He LJ, Sha YP, Li J, Gan JN Solid-State Electronics, 52(6), 937, 2008 |
| 3 |
Characterization of silicon-germanium heterojunction bipolar transistors degradation in silicon-germanium BiCMOS technologies Lee SY, Park CW Solid-State Electronics, 50(3), 333, 2006 |
| 4 |
Review of SiGeHBTs on SOI Mitrovic IZ, Buiu O, Hall S, Bagnall DM, Ashburn P Solid-State Electronics, 49(9), 1556, 2005 |
| 5 |
Electric field effects associated with the backside Ge profile in SiGeHBTs Zhang G, Cressler JD, Lanzerotti L, Johnson R, Jin ZR, Zhang SM, Niu GF, Joseph A Solid-State Electronics, 46(5), 655, 2002 |
| 6 |
Modelling of SiGe heterobipolar transistors: 200 GHz frequencies with symmetrical delay times Eberhardt J, Kasper E Solid-State Electronics, 45(12), 2097, 2001 |
| 7 |
Self-aligned selective-epitaxial-growth SiGeHBTs: process, device, and ICs Washio K, Ohue E, Oda K, Hayami R, Tanabe M, Shimamoto H, Masuda T, Ohhata K, Kondo M Thin Solid Films, 369(1-2), 352, 2000 |