검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Ultrathin (5 nm) SiGe-On-Insulator with high compressive strain (-2 GPa): From fabrication (Ge enrichment process) to in-depth characterizations Glowacki E, Le Royer C, Morand Y, Pedini JM, Denneulin T, Cooper D, Barnes JP, Nguyen P, Rouchon D, Hartmann JM, Gourhant O, Baylac E, Campidelli Y, Barge D, Bonnin O, Schwarzenbach W Solid-State Electronics, 97, 82, 2014 |
| 2 |
Improved 1/f noise characterization of strained SiGe on insulator MOSFETs fabricated on wafers obtained by the Ge enrichment technique Valenza M, Husseini JE, Martinez F, Bawedin M, Le Royer C, Damlencourt JF Solid-State Electronics, 70, 27, 2012 |
| 3 |
High Ge content SGOI substrates obtained by the Ge condensation technique: A template for growth of strained epitaxial Ge Souriau L, Terzieva V, Vandervorst W, Clemente F, Brijs B, Moussa A, Meuris M, Loo R, Caymax M Thin Solid Films, 517(1), 23, 2008 |
| 4 |
Ge wire MOSFETs fabricated by three-dimensional Ge condensation technique Irisawa T, Numata T, Hirashita N, Moriyama Y, Nakaharai S, Tezuka T, Sugiyama N, Takagi S Thin Solid Films, 517(1), 167, 2008 |