검색결과 : 1건
| No. | Article |
|---|---|
| 1 |
New trench gate power MOSFET with high breakdown voltage and reduced on-resistance using a SiGe zone in drift region Mehrad M, Orouji AA Current Applied Physics, 12(5), 1340, 2012 |
| No. | Article |
|---|---|
| 1 |
New trench gate power MOSFET with high breakdown voltage and reduced on-resistance using a SiGe zone in drift region Mehrad M, Orouji AA Current Applied Physics, 12(5), 1340, 2012 |