검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Growth of high quality epitaxial Si1-x-yGexCy layers by using chemical vapor deposition Hallstedt J, Suvar E, Persson POA, Hultman L, Wang YB, Radamson HH Applied Surface Science, 224(1-4), 46, 2004 |
| 2 |
The effect of carbon content on the minority carrier lifetime in lattice-matched p(+)-Si/p-SiGeC/n-Si/n(+)-Si diodes Shivaram R, Niu GF, Cressler JD, Croke ET Solid-State Electronics, 44(3), 559, 2000 |
| 3 |
Self-assembling SiGe and SiGeC nanostructures for light emitters and tunneling diodes Eberl K, Schmidt OG, Duschl R, Kienzle O, Ernst E, Rau Y Thin Solid Films, 369(1-2), 33, 2000 |