검색결과 : 13건
No. | Article |
---|---|
1 |
RF transistors: Recent developments and roadmap toward terahertz applications Schwierz F, Liou JJ Solid-State Electronics, 51(8), 1079, 2007 |
2 |
Proton and gamma radiation effects in a new first-generation SiGeHBT technology Haugerud BM, Pratapgarhwala MM, Comeau JP, Sutton AK, Prakash APG, Cressler JD, Marshall PW, Marshall CJ, Ladbury RL, El-Diwany M, Mitchell C, Rockett L, Bach T, Lawrence R, Haddad N Solid-State Electronics, 50(2), 181, 2006 |
3 |
An investigation of the effects of radiation exposure on stability constraints in epitaxial SiGe strained layers Chen TB, Sutton AK, Haugerud BM, Henderson W, Prakash APG, Cressler JD, Doolittle A, Liu XF, Joseph A, Marshall PW Solid-State Electronics, 50(7-8), 1194, 2006 |
4 |
Extraction of collector resistances for device characterization and compact models Wu HC, Mijalkovic S, Burghartz JN Solid-State Electronics, 50(9-10), 1475, 2006 |
5 |
The effects of mechanical planar biaxial strain in Si/SiGe HBT BiCMOS technology Haugerud BM, Nayeern MB, Krithivasan R, Lu Y, Zhu CD, Cressler JD, Belford RE, Joseph AJ Solid-State Electronics, 49(6), 986, 2005 |
6 |
Effects of self-heating on the microwave performance of SiGeHBTs Sampathkumaran R, Roenker KP Solid-State Electronics, 49(8), 1292, 2005 |
7 |
The revolution in SiGe: impact on device electronics Harame DL, Koester SJ, Freeman G, Cottrel P, Rim K, Dehlinger G, Ahlgren D, Dunn JS, Greenberg D, Joseph A, Anderson F, Rieh JS, Onge SAST, Coolbaugh D, Ramachandran V, Cressler JD, Subbanna S Applied Surface Science, 224(1-4), 9, 2004 |
8 |
Numerical simulation of strained Si/SiGe devices: the hierarchical approach Meinerzhagen B, Jungemann C, Neinhus B, Bartels M Applied Surface Science, 224(1-4), 235, 2004 |
9 |
Achieving a SiGeHBT epitaxial emitter with novel low thermal budget technique Brabant P, Wen JQ, Italiano J, Landin T, Cody N, Haen L Applied Surface Science, 224(1-4), 347, 2004 |
10 |
Proton response of low-frequency noise in 0.20 mu m 90 GHz f(T) UHV/CVD SiGeHBTs Jin ZR, Cressler JD, Niu GF, Marshall PW, Kim HS, Reed R, Joseph AJ Solid-State Electronics, 47(1), 39, 2003 |