검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
High performance SiGe HBT power unit-cell for S-Band open collector adaptive bias power amplifier design Chiou HK, Yeh PC, Lin KC Solid-State Electronics, 52(2), 239, 2008 |
| 2 |
High power density, high efficiency 1 W SiGe power HBT for 2.4 GHz power amplifier applications Yeh PC, Chiou HK, Lee CY, Yeh J, Tsai YH, Tang D, Chern J Solid-State Electronics, 52(5), 745, 2008 |
| 3 |
An iteration approach for base doping optimization to minimize the base transit time in triangular-Ge-profile SiGeHBTs Khanduri G, Panwar B Solid-State Electronics, 51(6), 961, 2007 |
| 4 |
Analysis and understanding of unique cryogenic phenomena in state-of-the-art SiGeHBTs Liang QQ, Krithivasan R, Ahmed A, Lu Y, Li Y, Cressler JD, Niu GF, Rieh JS, Freeman G, Ahlgren D, Joseph A Solid-State Electronics, 50(6), 964, 2006 |
| 5 |
On the geometrical dependence of low-frequency noise in SiGeHBTs Zhao EH, Cressler JD, El-Diwany M, Krakowski TL, Sadovnikov A, Kocoski D Solid-State Electronics, 50(11-12), 1748, 2006 |
| 6 |
On the optimization and design of SiGeHBT cascode low-noise amplifiers Liang QQ, Niu GF, Cressler JD, Taylor S, Harame DL Solid-State Electronics, 49(3), 329, 2005 |
| 7 |
Base transit time of graded-base Si/SiGe HBTs considering recombination lifetime and velocity saturation Chang ST, Liu CW, Lu SC Solid-State Electronics, 48(2), 207, 2004 |
| 8 |
Degradation and recovery of SiGeHBTs following radiation and hot-carrier stressing Sheng SR, McAlister SP, McCaffrey JP, Kovacic SJ Solid-State Electronics, 48(10-11), 1901, 2004 |
| 9 |
Self-heating in multi-emitter SiGeHBTs McAlister SP, McKinnon WR, Kovacic SJ, Lafontaine H Solid-State Electronics, 48(10-11), 2001, 2004 |