검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Interface properties of 4H-SiC MOS structures studied by a slow positron beam Maekawa M, Kawasuso A, Yoshikawa M, Ichimiya A Materials Science Forum, 445-6, 144, 2004 |
| 2 |
Observation of SiO(2)/SiC interface with different off-angle from Si(0001) face using transmission electron microscopy Fukuda K, Suzuki S, Senzaki J, Kosugi R, Tanaka T, Arai K Materials Science Forum, 353-356, 647, 2001 |
| 3 |
Indications for nitrogen-assisted removal of carbon from SiO(2)-SiC interface Jamet P, Dimitrijev S, Tanner P Materials Science Forum, 353-356, 655, 2001 |
| 4 |
Dissolution mechanism of the carbon islands at the SiO(2)-SiC interface Krafcsik OH, Josepovits KV, Deak P Materials Science Forum, 353-356, 659, 2001 |