검색결과 : 35건
| No. | Article |
|---|---|
| 1 |
First-principles study of defects in amorphous-SiO2/Si interfaces Li P, Chen ZH, Yao P, Zhang FJ, Wang JW, Song Y, Zuo X Applied Surface Science, 483, 231, 2019 |
| 2 |
질산산화법을 이용한 SiO2/Si 구조의 계면결함 제거 최재영, 김도연, 김우병 Korean Journal of Materials Research, 28(2), 118, 2018 |
| 3 |
Further indication of a low quartz structure at the SiO2/Si interface from coincidence Doppler broadening spectroscopy Brauer G, Becvar F, Anwand W, Skorupa W Applied Surface Science, 252(9), 3368, 2006 |
| 4 |
Arsenic shallow depth profiling: accurate quantification inSiO(2)/Si stack Barozzi M, Giubertoni D, Anderle M, Bersani A Applied Surface Science, 231-2, 632, 2004 |
| 5 |
Quality of SiO2 and of SiGe formed by oxidation of Si/Si0.7Ge0.3 heterostructure using atomic oxygen at 400 degrees C Nohira H, Kuroiwa T, Nakamura A, Hirose Y, Hirose Y, Mitsui J, Sakai W, Nakajima K, Suzuki M, Kimura K, Sawano K, Nakagawa K, Shiraki Y, Hattori T Applied Surface Science, 237(1-4), 134, 2004 |
| 6 |
Microscopic mechanism of interfacial reaction during Si oxidation Akiyama T, Kageshima H Applied Surface Science, 216(1-4), 270, 2003 |
| 7 |
Si/SiO2 interface attack during metal oxide growth under low oxygen pressure Kubo K, Kiyohara A, Shimoyama K, Yamabe K Applied Surface Science, 216(1-4), 307, 2003 |
| 8 |
Penetration of electronic states from silicon substrate into silicon oxide Takahasi K, Seman MB, Hirose K, Hattori T Applied Surface Science, 190(1-4), 56, 2002 |
| 9 |
Positron characteristics of various SiO2 polymorphs Kuriplach J, Anwand W, Brauer G, Skorupa W Applied Surface Science, 194(1-4), 84, 2002 |
| 10 |
Proton trapping and diffusion in SiO2 thin films: a first-principles study Zhang QM, Tang SP, Wallace RM Applied Surface Science, 172(1-2), 41, 2001 |