| 1 |
Effects of switching from < 1 1 0 > to < 1 0 0 > channel orientation and tensile stress on n-channel and p-channel metal-oxide-semiconductor transistors
Yang PZ, Lau WS, Lai SW, Lo VL, Siah SY, Chan L
Solid-State Electronics, 54(4), 461, 2010 |
| 2 |
Selection of gate length and gate bias to make nanoscale metal-oxide-semiconductor transistors less sensitive to both statistical gate length variation and temperature variation
Yang PZ, Lau WS, Lai SW, Lo VL, Siah SY, Chan L
Solid-State Electronics, 54(11), 1304, 2010 |
| 3 |
X-ray photoemission spectroscopy study of silicidation of Ti on BF2+-implanted polysilicon
Chua HN, Pey KL, Lai WH, Chai JW, Pan JS, Chua DHC, Siah SY
Journal of Vacuum Science & Technology B, 19(6), 2252, 2001 |
| 4 |
Effect of BF2+ implantation on void formation in Ti-salicided narrow polysilicon lines
Pey KL, Chua HN, Siah SY
Electrochemical and Solid State Letters, 3(9), 442, 2000 |
| 5 |
Effects of high current conduction in sub-micron Ti-silicided films
Gan CL, Pey KL, Chim WK, Siah SY
Solid-State Electronics, 44(10), 1837, 2000 |
