검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Unusual step meandering due to Ehrlich-Schwoebel barrier in GaN epitaxy on the N-polar surface Turski H, Krzyzewski F, Feduniewicz-Zmuda A, Wolny P, Siekacz M, Muziol G, Cheze C, Nowakowski-Szukudlarek K, Xing H, Jena D, Zaluska-Kotur M, Skierbiszewski C Applied Surface Science, 484, 771, 2019 |
| 2 |
Nitrogen-rich growth for device quality N-polar InGaN/GaN quantum wells by plasma-assisted MBE Turski H, Feduniewicz-Zmuda A, Sawicka M, Reszka A, Kowalski B, Krysko M, Wolny P, Smalc-Koziorowska J, Siekacz M, Muziol G, Nowakowski-Szukudlarek K, Grzanka S, Skierbiszewski C Journal of Crystal Growth, 512, 208, 2019 |
| 3 |
Growth rate independence of Mg doping in GaN grown by plasma-assisted MBE Turski H, Muziol G, Siekacz M, Wolny P, Szkudlarek K, Feduniewicz-Zmuda A, Dybko K, Skierbiszewski C Journal of Crystal Growth, 482, 56, 2018 |
| 4 |
Indium incorporation in semipolar (20(2)over-bar1) and nonpolar (10(1)over-bar0) InGaN grown by plasma assisted molecular beam epitaxy Sawicka M, Feduniewicz-Zmuda A, Krysko M, Turski H, Muziol G, Siekacz M, Wolny P, Skierbiszewski C Journal of Crystal Growth, 459, 129, 2017 |
| 5 |
High power nitride laser diodes grown by plasma assisted molecular beam epitaxy Muziol G, Siekacz M, Turski H, Wolny P, Grzanka S, Grzanka E, Feduniewicz-Zmuda A, Borysiuk J, Sobczak K, Domagala J, Nowakowska-Siwinska A, Makarowa I, Perlin P, Skierbiszewski C Journal of Crystal Growth, 425, 398, 2015 |
| 6 |
Nonequivalent atomic step edges-Role of gallium and nitrogen atoms in the growth of InGaN layers Turski H, Siekacz M, Wasilewski ZR, Sawicka M, Porowski S, Skierbiszewski C Journal of Crystal Growth, 367, 115, 2013 |
| 7 |
MBE fabrication of III-N-based laser diodes and its development to industrial system Skierbiszewski C, Siekacz M, Turski H, Muziol G, Sawicka M, Perlin P, Wasilewski ZR, Porowski S Journal of Crystal Growth, 378, 278, 2013 |
| 8 |
Growth of InGaN and InGaN/InGaN quantum wells by plasma-assisted molecular beam epitaxy Siekacz M, Feduniewicz-Zmuda A, Cywinski G, Krysko M, Grzegory I, Krukowski S, Waldrip KE, Jantsch W, Wasilewski ZR, Porowski S, Skierbiszewski C Journal of Crystal Growth, 310(17), 3983, 2008 |
| 9 |
Role of dislocation-free GaN substrates in the growth of indium containing optoelectronic structures by plasma-assisted MBE Skierbiszewski C, Siekacz M, Perlin P, Feduniewicz-Zmuda A, Cywinski G, Grzegory I, Leszczyniski M, Wasilewski ZR, Porowski S Journal of Crystal Growth, 305(2), 346, 2007 |
| 10 |
Growth of thin AllnN/GalnN quantum wells for applications to high-speed intersubband devices at telecommunication wavelengths Cywinski G, Skierbiszewski C, Fedunieiwcz-Zmuda A, Siekacz M, Nevou L, Doyennette L, Tchernycheva M, Julien FH, Prystawko P, Krysko M, Grzanka S, Grzegory I, Presz A, Domagala JZ, Smalc J, Albrecht M, Remmele T, Porowski S Journal of Vacuum Science & Technology B, 24(3), 1505, 2006 |