화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Radiotracer investigation of gadolinium induced deep levels in hexagonal silicon carbide
Pasold G, Albrecht F, Hulsen C, Sielemann R, Zeitz WD, Witthuhn W
Materials Science Forum, 457-460, 783, 2004
2 Investigation of electronic states of Pd in 4H-SiC by means of Radiotracer-DLTS
Grossner U, Grillenberger J, Albrecht F, Pasold G, Sielemann R, Svensson BG, Witthuhn W
Materials Science Forum, 457-460, 791, 2004
3 A deep erbium-related bandgap state in 4H silicon carbide
Pasold G, Albrecht F, Grillenberger J, Grossner U, Hulsen C, Sielemann R, Witthuhn W
Materials Science Forum, 433-4, 487, 2002
4 Tantalum and tungsten in silicon carbide: Identification and polytype dependence of deep levels
Grillenberger J, Achtziger N, Pasold G, Sielemann R, Witthuhn W
Materials Science Forum, 353-356, 475, 2001