검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Comparison of ion-beam-assisted molecular beam epitaxy with conventional molecular beam epitaxy of thin hexagonal gallium nitride films Sienz S, Gerlach JW, Hoche T, Sidorenko A, Mayerhofer TG, Benndorf G, Rauschenbach B Journal of Crystal Growth, 264(1-3), 184, 2004 |
| 2 |
Ion-beam-assisted molecular-beam epitaxy: a method to deposit gallium nitride films with high crystalline quality Sienz S, Gerlach JW, Hoche T, Sidorenko A, Rauschenbach B Thin Solid Films, 458(1-2), 63, 2004 |
| 3 |
Dependence of ion beam induced nitrogen diffusion in aluminum on oxygen impurities Manova D, Huber P, Sienz S, Gerlach JW, Mandl S, Rauschenbach B Journal of Vacuum Science & Technology A, 20(1), 206, 2002 |
| 4 |
In-situ stress measurement during the gallium ion implantation-induced doping of nitride Sienz S, Rauschenbach B, Wenzel A, Lell A, Bader S, Harle V Thin Solid Films, 415(1-2), 1, 2002 |
| 5 |
Study of stress evolution of boron nitride films prepared by ion assisted deposition Zeitler M, Sienz S, Rauschenbach B Journal of Vacuum Science & Technology A, 17(2), 597, 1999 |