검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Distinctions in the Ge wetting layer formation and self-assembled island nucleation between single- and multilayer SiGe/Si(0 0 1) structures Yurasov DV, Shaleev MV, Novikov AV Journal of Crystal Growth, 313(1), 12, 2010 |
| 2 |
Dosage dependence of Ge quantum dots grown on carbon-implanted Si substrates Ogawa M, Cha DH, Lee JY, Wang KL Journal of Crystal Growth, 301, 766, 2007 |
| 3 |
Phosphorus-mediated growth of Ge quantum dots on Si(001) Qin J, Xue F, Wang Y, Bai LH, Cui J, Yang XJ, Fan YL, Jiang ZM Journal of Crystal Growth, 278(1-4), 136, 2005 |
| 4 |
Factors limiting the composition window for fabrication of SiGe-on-insulator substrate by low-energy oxygen implantation Ishikawa Y, Shibata N, Fukatsu S Thin Solid Films, 369(1-2), 213, 2000 |