검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Ferroelectric properties of SOS and SOI pseudo-MOSFETs with HfO2 interlayers Popov VP, Antonov VA, Ilnitsky MA, Tyschenko IE, Vdovin VI, Miakonkikh AV, Rudenko KV Solid-State Electronics, 159, 63, 2019 |
| 2 |
Study of high-temperature Smart Cut (TM): Application to silicon-on-sapphire films and to thin foils of single crystal silicon Meyer R, Kononchuck O, Moriceau H, Lemiti M, Bruel M Solid-State Electronics, 115, 225, 2016 |
| 3 |
Analysis of the breakdown voltage in SOI and SOS technologies Roig J, Vellvehi M, Flores D, Rebollo J, Millan J, Krishnan S, De Souza MM, Narayanan EMS Solid-State Electronics, 46(2), 255, 2002 |
| 4 |
Microscopic observation of strain induced in heteroepitaxial layers with reflection type of infrared polariscope Yamada M, Chu T Journal of Crystal Growth, 210(1-3), 102, 2000 |
| 5 |
Adaptation of the pseudo-MOS transistor for the characterization of silicon-on-sapphire films Hefyene N, Cristoloveanu S, Ghibaudo G, Gentil P, Moriyasu Y, Morishita T, Matsui M, Yasujima A Solid-State Electronics, 44(10), 1711, 2000 |
| 6 |
Epitaxial and Thermal Strains in Oxidic Thin-Films on Si(001) Matthee T, Wecker J, Bardal A, Samwer K Thin Solid Films, 258(1-2), 264, 1995 |