검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Novel AlInN/GaN integrated circuits operating up to 500 degrees C Gaska R, Gaevski M, Jain R, Deng J, Islam M, Simin G, Shur M Solid-State Electronics, 113, 22, 2015 |
| 2 |
Maximum powers of low-loss series-shunt FET RF switches Yang Z, Hu X, Yang J, Simin G, Shur M, Gaska R Solid-State Electronics, 53(2), 117, 2009 |
| 3 |
Drain-to-gate field engineering for improved frequency response of GaN-based HEMTs Pala N, Hu X, Deng J, Yang J, Gaska R, Yang Z, Koudymov A, Shur MS, Simin G Solid-State Electronics, 52(8), 1217, 2008 |
| 4 |
Low frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors Pala N, Rumyantsev S, Shur M, Gaska R, Hu X, Yang J, Simin G, Khan MA Solid-State Electronics, 47(6), 1099, 2003 |
| 5 |
High performance 0.25 mu m gate-length AlGaN/GaN HEMTs on sapphire with power density of over 4.5 W/mm at 20 GHz Kumar V, Kuliev A, Schwindt R, Muir M, Simin G, Yang J, Khan MA, Adesida I Solid-State Electronics, 47(9), 1577, 2003 |
| 6 |
Transient response of highly doped thin channel GaN metal-semiconductor and metal-oxide-semiconductor field effect transistors Pala N, Rumyantsev SL, Shur MS, Hu X, Tarakji A, Gaska R, Khan MA, Simin G, Yang J Solid-State Electronics, 46(5), 711, 2002 |
| 7 |
DC and microwave performance of a GaN/AlGaN MOSHFET under high temperature stress Tarakji A, Hu X, Koudymov A, Simin G, Yang J, Khan MA, Shur MS, Gaska R Solid-State Electronics, 46(8), 1211, 2002 |
| 8 |
Low frequency noise in n-GaN with high electron mobility Rumyantsev SL, Look DC, Levinshtein ME, Khan MA, Simin G, Adivarahan V, Molnar RJ, Shur MS Materials Science Forum, 338-3, 1603, 2000 |