검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Phosphorus doping of silicon at substrate temperatures above 600 degrees C Thompson PE, Jernigan GG, Simons D, Chi P, Jonker BT, van 't Erve OMJ Thin Solid Films, 518, S270, 2010 |
| 2 |
Quantitative depth profiling of an alternating Pt/Co multilayer and a Pt-Co alloy multilayer by SIMS using a Buckminsterfullerene (C-60) source Kim KJ, Simons D, Gillen G Applied Surface Science, 253(14), 6000, 2007 |
| 3 |
Round-robin study of arsenic implant dose measurement in silicon by SIMS Simons D, Kim K, Benbalagh R, Bennett J, Chew A, Gehre D, Hasegawa T, Hitzman C, Ko J, Lindstrom R, MacDonald B, Magee C, Montgomery N, Peres P, Ronsheim P, Yoshikawa S, Schuhmacher M, Stockwell W, Sykes D, Tomita A, Toujou F, Won J Applied Surface Science, 252(19), 7232, 2006 |
| 4 |
Towards reproducible scanning capacitance microscope image interpretation Kopanski JJ, Marchiando JF, Rennex BG, Simons D, Chau Q Journal of Vacuum Science & Technology B, 22(1), 399, 2004 |
| 5 |
Boron incorporation with and without atomic hydrogen during the growth of doped layers on Si(100) Silvestre C, Thompson P, Jernigan G, Simons D Journal of Vacuum Science & Technology A, 16(4), 2619, 1998 |
| 6 |
Formation of Shallow Junctions During Rapid Thermal-Processing from Electron-Beam Deposited Boron Sources Zagozdzonwosik W, Korablev K, Rusakova I, Simons D, Shi JH, Chi P, Wolfe JC Journal of the Electrochemical Society, 143(9), 2981, 1996 |