화학공학소재연구정보센터
검색결과 : 11건
No. Article
1 Top-seeded solution growth of SrTiO3 single crystals virtually free of mosaicity
Guguschev C, Kok DJ, Juda U, Uecker R, Sintonen S, Galazka Z, Bickermann M
Journal of Crystal Growth, 468, 305, 2017
2 Incorporation and effects of impurities in different growth zones within basic ammonothermal GaN
Sintonen S, Kivisaari P, Pimputkar S, Suihkonen S, Schulz T, Speck JS, Nakamura S
Journal of Crystal Growth, 456, 43, 2016
3 Evolution of impurity incorporation during ammonothermal growth of GaN
Sintonen S, Wahl S, Richter S, Meyer S, Suihkonen S, Schulz T, Irmscher K, Danilewsky AN, Tuomi TO, Stankiewicz R, Albrecht M
Journal of Crystal Growth, 456, 51, 2016
4 Synchrotron X-ray diffraction topography study of bonding-induced strain in silicon-on-insulator wafers
Lankinen A, Tuomi TO, Kostamo P, Jussila H, Sintonen S, Lipsanen H, Tilli M, Makinen J, Danilewsky AN
Thin Solid Films, 603, 435, 2016
5 Effect of growth temperature on the epitaxial growth of ZnO on GaN by ALD
Sarkijarvi S, Sintonen S, Tuomisto F, Bosund M, Suihkonen S, Lipsanen H
Journal of Crystal Growth, 398, 18, 2014
6 Defect structure of a free standing GaN wafer grown by the ammonothermal method
Sintonen S, Suihkonen S, Jussila H, Lipsanen H, Tuomi TO, Letts E, Hoff S, Hashimoto T
Journal of Crystal Growth, 406, 72, 2014
7 Aluminum oxide from trimethylaluminum and water by atomic layer deposition: The temperature dependence of residual stress, elastic modulus, hardness and adhesion
Ylivaara OME, Liu XW, Kilpi L, Lyytinen J, Schneider D, Laitinen M, Julin J, Ali S, Sintonen S, Berdova M, Haimi E, Sajavaara T, Ronkainen H, Lipsanen H, Koskinen J, Hannula SP, Puurunen RL
Thin Solid Films, 552, 124, 2014
8 Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors
Putkonen M, Bosund M, Ylivaara OME, Puurunen RL, Kilpi L, Ronkainen H, Sintonen S, Ali S, Lipsanen H, Liu XW, Haimi E, Hannula SP, Sajavaara T, Buchanan I, Karwacki E, Vaha-Nissi M
Thin Solid Films, 558, 93, 2014
9 Fabrication of GaN structures with embedded network of voids using pillar patterned GaN templates
Svensk O, Ali M, Riuttanen L, Torma PT, Sintonen S, Suihkonen S, Sopanen M, Lipsanen H
Journal of Crystal Growth, 370, 42, 2013
10 Evaluation of critical thickness of GaP0.98N0.02 layer on GaP substrate by synchrotron X-ray diffraction topography
Jussila H, Nagarajan S, Sintonen S, Suihkonen S, Lankinen A, Huhtio T, Paulmann C, Lipsanen H, Tuomi TO, Sopanen M
Thin Solid Films, 534, 680, 2013