검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Influence of Si wafer thinning processes on (sub)surface defects Inoue F, Jourdain A, Peng L, Phommahaxay A, De Vos J, Rebibis KJ, Miller A, Sleeckx E, Beyne E, Uedono A Applied Surface Science, 404, 82, 2017 |
| 2 |
Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques Redolfi A, Kubicek S, Rooyackers R, Kim MS, Sleeckx E, Devriendt K, Shamiryan D, Vandeweyer T, Delande T, Horiguchi N, Togo M, Wouters JMD, Jurczak M, Hoffmann T, Cockburn A, Gravey V, Diehl DL Solid-State Electronics, 71, 106, 2012 |
| 3 |
Scaling to sub-1 nm equivalent oxide thickness with hafnium oxide deposited by atomic layer deposition Delabie A, Caymax M, Brijs B, Brunco DP, Conard T, Sleeckx E, Van Elshocht S, Ragnarsson LA, De Gendt S, Heyns MM Journal of the Electrochemical Society, 153(8), F180, 2006 |
| 4 |
Process optimization and integration of trimethylsilane-deposited alpha-SiC : H and alpha-SiCO : H dielectric thin films for damascene processing Gray WD, Loboda MJ, Bremmer JN, Struyf H, Lepage M, Van Hove M, Donaton RA, Sleeckx E, Stucchi M, Lanckmans F, Gao T, Boullart W, Coenegrachts B, Maenhoudt M, Vanhaelemeersch S, Meynen H, Maex K Journal of the Electrochemical Society, 150(7), G404, 2003 |
| 5 |
Properties of porous HSQ-based films capped by plasma enhanced chemical vapor deposition dielectric layers Iacopi F, Baklanov MR, Sleeckx E, Conrad T, Bender H, Meynen H, Maex K Journal of Vacuum Science & Technology B, 20(1), 109, 2002 |