화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Direct comparison of two-dimensional dopant profiles by scanning capacitance microscopy with TSUPREM4 process simulation
McMurray JS, Kim J, Williams CC, Slinkman J
Journal of Vacuum Science & Technology B, 16(1), 344, 1998
2 Imaging Integrated-Circuit Dopant Profiles with the Force-Based Scanning Kelvin Probe Microscope
Hochwitz T, Henning AK, Levey C, Daghlian C, Slinkman J, Never J, Kaszuba P, Gluck R, Wells R, Pekarik J, Finch R
Journal of Vacuum Science & Technology B, 14(1), 440, 1996
3 Capacitive Effects on Quantitative Dopant Profiling with Scanned Electrostatic Force Microscopes
Hochwitz T, Henning AK, Levey C, Daghlian C, Slinkman J
Journal of Vacuum Science & Technology B, 14(1), 457, 1996