검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Impact of strain on the passivation efficiency of Ge dangling bond interface defects in condensation grown SiO2/GexSi1-x/SiO2/(100) Si structures with nm-thin GexSi1-x layers Madia O, Nguyen APD, Thoan NH, Afanas'ev V, Stesmans A, Souriau L, Slotte J, Tuomisto F Applied Surface Science, 291, 11, 2014 |
| 2 |
Divacancies at room temperature in germanium Slotte J, Kuitunen K, Kilpelainen S, Tuomisto F, Capan I Thin Solid Films, 518(9), 2314, 2010 |
| 3 |
He implantation to control B diffusion in crystalline and preamorphized Si Bruno E, Mirabella S, Priolo F, Kuitunen K, Tuomisto F, Slotte J, Giannazzo F, Bongiorno C, Raineri V, Napolitani E Journal of Vacuum Science & Technology B, 26(1), 386, 2008 |
| 4 |
Implantation defects and n-type doping in Ge and Ge rich SiGe Peaker AR, Markevich VP, Hamilton B, Hawkins ID, Slotte J, Kuitunen K, Tuomisto F, Satta A, Simoen E, Abrosimov NV Thin Solid Films, 517(1), 152, 2008 |
| 5 |
On the optical crystal properties of quantum-well GaIn(N)As/GaAs semiconductors grown by molecular-beam epitaxy Pavelescu EM, Slotte J, Dhaka VDS, Saarinen K, Antohe S, Cimpoca G, Pessa M Journal of Crystal Growth, 297(1), 33, 2006 |
| 6 |
Vacancy-type defect distributions of B-11-, N-14- and Al-27-implanted 4H-SiC studied by Positron Annihilation Spectroscopy Janson MS, Slotte J, Kuznetsov AY, Saarinen K, Hallen A Materials Science Forum, 433-4, 641, 2002 |