| 1 |
LKE and BGI Lorentzian noise in strained and non-strained tri-gate SOI FinFETs with HfSiON/SiO2 gate dielectric
Lukyanchikova N, Garbar N, Kudina V, Smolanka A, Simoen E, Claeys C
Solid-State Electronics, 63(1), 27, 2011 |
| 2 |
Linear kink effect Lorentzians in the noise spectra of n- and p-channel fin field-effect transistors processed in standard and strained silicon-on-insulator substrates
Lukyanchikova N, Garbar N, Kudina V, Smolanka A, Claeys C, Simoen E
Solid-State Electronics, 53(6), 613, 2009 |
| 3 |
High gate voltage drain current leveling off and its low-frequency noise in 65 nm fully-depleted strained and non-strained SOI nMOSFETs
LukyanchikovA N, Garbar N, Kudina V, Smolanka A, Lokshin M, Simoen E, Claeys C
Solid-State Electronics, 52(5), 801, 2008 |
| 4 |
Electron valence-band tunnelling excess noise in twin-gate silicon-on-insulator MOSFETs
Simoen E, Claeys C, Lukyanchikova N, Garbar N, Smolanka A, Der Agopian PG, Martino JA
Solid-State Electronics, 50(1), 52, 2006 |
| 5 |
Short-channel effects in the Lorentzian noise induced by the EVB tunneling in partially-depleted SOI MOSFETs
Lukyanchikova N, Garbar N, Smolanka A, Simoen E, Mercha A, Claeys C
Solid-State Electronics, 48(5), 747, 2004 |
