1 |
Thin film atomic layer deposition equipment for semiconductor processing Sneh O, Clark-Phelps RB, Londergan AR, Winkler J, Seidel TE Thin Solid Films, 402(1-2), 248, 2002 |
2 |
Growth of SiO2 at Room-Temperature with the Use of Catalyzed Sequential Half-Reactions Klaus JW, Sneh O, George SM Science, 278(5345), 1934, 1997 |
3 |
Thermal-Stability of Hydroxyl-Groups on a Well-Defined Silica Surface Sneh O, George SM Journal of Physical Chemistry, 99(13), 4639, 1995 |
4 |
Sample Manipulator Employing a Gas-Thermal Switch Designed for High-Pressure Experiments in an Ultrahigh-Vacuum Apparatus Sneh O, George SM Journal of Vacuum Science & Technology A, 13(2), 493, 1995 |
5 |
H2O Adsorption-Kinetics on Si(111)7X7 and Si(111)7X7 Modified by Laser Annealing Wise ML, Okada LA, Sneh O, George SM Journal of Vacuum Science & Technology A, 13(4), 1853, 1995 |
6 |
Adsorption and Decomposition of Diethyldiethoxysilane on Silicon Surfaces - New Possibilities for SiO2 Deposition Wise ML, Sneh O, Okada LA, George SM Journal of Vacuum Science & Technology B, 13(3), 865, 1995 |
7 |
Xenon Diffusion on a Stepped Pt(11,11,9) Surface Sneh O, George SM Journal of Chemical Physics, 101(4), 3287, 1994 |
8 |
High-Resolution Infrared Overtone Spectroscopy of N-2-HF - Vibrational Red Shifts and Predissociation Rate as a Function of HF Stretching Quanta Farrell JT, Sneh O, Nesbitt DJ Journal of Physical Chemistry, 98(24), 6068, 1994 |