검색결과 : 19건
| No. | Article |
|---|---|
| 1 |
Homoepitaxial HVPE GaN: A potential substrate for high performance devices Freitas JA, Culbertson JC, Mahadik NA, Tadjer MJ, Wu S, Raghothamachar B, Dudley M, Sochacki T, Bockowski M Journal of Crystal Growth, 500, 104, 2018 |
| 2 |
Doping in bulk HVPE-GaN grown on native seeds - highly conductive and semi-insulating crystals Bockowski M, Iwinska M, Amilusik M, Lucznik B, Fijalkowski M, Litwin-Staszewska E, Piotrzkowski R, Sochacki T Journal of Crystal Growth, 499, 1, 2018 |
| 3 |
The influence of the substrate misorientation on the structural quality of GaN layers grown by HVPE Liliental-Weber Z, dos Reis R, Sochacki T, Bockowski M Journal of Crystal Growth, 498, 346, 2018 |
| 4 |
Crystal growth of HVPE-GaN doped with germanium Iwinska M, Takekawa N, Ivanov VY, Amilusik M, Kruszewski P, Piotrzkowski R, Litwin-Staszewska E, Lucznik B, Fijalkowski M, Sochacki T, Teisseyre H, Murakami H, Bockowski M Journal of Crystal Growth, 480, 102, 2017 |
| 5 |
Impact of temperature-induced coalescence on SERS properties of Au nanoparticles deposited on GaN nano-columns Dziecielewski I, Smalc-Koziorowska J, Bankowska M, Sochacki T, Khachapuridze A, Weyher J Applied Surface Science, 378, 30, 2016 |
| 6 |
HVPE-GaN growth on GaN-based Advanced Substrates by Smart Cut (TM) Iwinska M, Amilusik M, Fijalkowski M, Sochacki T, Lucznik B, Grzanka E, Litwin-Staszewska E, Weyher JL, Nowakowska-Siwinska A, Muziol G, Skierbiszewski C, Grzegory I, Guiot E, Caulmilone R, Bockowski M Journal of Crystal Growth, 456, 73, 2016 |
| 7 |
Influence of edge-grown HVPE GaN on the structural quality of c-plane oriented HVPE-GaN grown on ammonothermal GaN substrates Domagala JZ, Smalc-Koziorowska J, Iwinska M, Sochacki T, Amilusik M, Lucznik B, Fijalkowski M, Kamler G, Grzegory I, Kucharski R, Zajac M, Bockowski M Journal of Crystal Growth, 456, 80, 2016 |
| 8 |
Growth of HVPE-GaN on native seeds - numerical simulation based on experimental results Lucznik B, Iwinska M, Sochacki T, Amilusik M, Fijalkowski M, Grzegory I, Bockowski M Journal of Crystal Growth, 456, 86, 2016 |
| 9 |
Homoepitaxial growth of HVPE-GaN doped with Si Iwinska M, Sochacki T, Amilusik M, Kempisty P, Lucznik B, Fijalkowski M, Litwin-Staszewska E, Smalc-Koziorowska J, Khapuridze A, Staszczak G, Grzegory I, Bockowski M Journal of Crystal Growth, 456, 91, 2016 |
| 10 |
Incorporation of pervasive impurities on HVPE GaN growth directions Freitas JA, Culbertson JC, Mahadik NA, Glaser ER, Sochacki T, Bockowski M, Lee SK, Shim KB Journal of Crystal Growth, 456, 101, 2016 |