검색결과 : 13건
No. | Article |
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1 |
Hard X-ray photoelectron spectroscopy investigation of annealing effects on buried oxide in GaAs/Si junctions by surface-activated bonding Yamajo S, Yoon S, Liang J, Sodabanlu H, Watanabe K, Sugiyama M, Yasui A, Ikenaga E, Shigekawa N Applied Surface Science, 473, 627, 2019 |
2 |
High throughput MOVPE and accelerated growth rate of GaAs for PV application Ubukata A, Sodabanlu H, Aihara T, Oshima R, Sugaya T, Koseki S, Matsumoto K, Watanabe K, Nakano Y, Sugiyama M Journal of Crystal Growth, 509, 87, 2019 |
3 |
Design evolution of MOVPE reactors for improved productivity: Adaptation to nitrides and feedback to classical III-V Matsumoto K, Ubukata A, Piao GX, Yano Y, Tabuchi T, Koseki S, Sodabanlu H, Watanabe K, Nakano Y, Sugiyama M Journal of Crystal Growth, 507, 134, 2019 |
4 |
Accelerated GaAs growth through MOVPE for low-cost PV applications Ubukata A, Sodabanlu H, Watanabe K, Koseki S, Yano Y, Tabuchi T, Sugaya T, Matsumoto K, Nakano Y, Sugiyama M Journal of Crystal Growth, 489, 63, 2018 |
5 |
Stability and controllability of InGaAs/GaAsP wire-on-well (WoW) structure for multi junction solar cells Cho H, Toprasertpong K, Sodabanlu H, Watanabe K, Sugiyama M, Nakano Y Journal of Crystal Growth, 464, 86, 2017 |
6 |
Improved luminescence from InGaN/GaN MQWs by reducing initial nucleation density using sputtered AIN on sapphire substrate Wang HB, Sodabanlu H, Daigo Y, Seino T, Nakagawa T, Sugiyama M Journal of Crystal Growth, 465, 12, 2017 |
7 |
Low-temperature MOVPE using TEGa for suppressed layer undulation in InxGa1-xAs/GaAs1-yPy superlattice on vicinal substrates Fujii H, Sodabanlu H, Sugiyama M, Nakano Y Journal of Crystal Growth, 414, 3, 2015 |
8 |
Strain effect for different phosphorus content of InGaAs/GaAsP super-lattice in GaAs p-i-n single junction solar cell Watanabe K, Wang YP, Sodabanlu H, Sugiyama M, Nakano Y Journal of Crystal Growth, 401, 712, 2014 |
9 |
Optimized interfacial management for InGaAs/GaAsP strain-compensated superlattice structure Ma SJ, Wang YP, Sodabanlu H, Watanabe K, Sugiyama M, Nakano Y Journal of Crystal Growth, 370, 157, 2013 |
10 |
Effect of hetero-interfaces on in situ wafer curvature behavior in InGaAs/GaAsP strain-balanced MQWs Ma SJ, Wang YP, Sodabanlu H, Watanabe K, Sugiyama M, Nakano Y Journal of Crystal Growth, 352(1), 245, 2012 |