| 1 |
Unzipping and movement of Lomer-type edge dislocations in Ge/GeSi/Si(001) heterostructures
Bolkhovityanov YB, Deryabin AS, Gutakovskii AK, Sokolov LV
Journal of Crystal Growth, 483, 265, 2018 |
| 2 |
Unexpected travel of Lomer-type dislocations in Ge/GexSi1-x/Si(001) heterostructures
Bolkhovityanov YB, Deryabin AS, Gutakovskii AK, Sokolov LV
Thin Solid Films, 616, 348, 2016 |
| 3 |
Edge misfit dislocations in the GeSi/Si(001) pair: Conditions and specific features of high-quantity generation
Bolkhovityanov YB, Deryabin AS, Gutakovskii AK, Sokolov LV
Journal of Crystal Growth, 338(1), 12, 2012 |
| 4 |
Specific features of formation and propagation of 60 degrees and 90 degrees misfit dislocations in GexS1-x/Si films with x > 0.4
Bolkhovityanov YB, Deryabin AS, Gutakovskii AK, Sokolov LV
Journal of Crystal Growth, 312(21), 3080, 2010 |
| 5 |
Formation of edge misfit dislocations in Ge chi Si1-chi (chi similar to 0.4-0.5) films grown on misoriented (001) -> (111) Si substrates
Bolkhovityanov YB, Deryabin AS, Gutakovskii AK, Sokolov LV
Journal of Crystal Growth, 310(15), 3422, 2008 |
| 6 |
Structures GexSi1-x/Si(001) grown by low-temperature (300-400 degrees C) molecular beam epitaxy: Misfit dislocation propagation
Bolkhovityanov YB, Deryabin AS, Gutakovskii AK, Revenko MA, Sokolov LV
Journal of Crystal Growth, 280(1-2), 309, 2005 |
| 7 |
Heterostructures GexSi1-x/Si(001) (x=0.18-0.62) grown by molecular beam epitaxy at a low (350 degrees C) temperature: specific features of plastic relaxation
Bolkhovityanov YB, Deryabin AS, Gutakovskii AK, Revenko MA, Sokolov LV
Thin Solid Films, 466(1-2), 69, 2004 |
| 8 |
Precise control of size and density of self-assembled Ge dot on Si(100) by carbon-induced strain-engineering
Wakayama Y, Sokolov LV, Zakharov N, Werner R, Gosele U
Applied Surface Science, 216(1-4), 419, 2003 |
| 9 |
Control of structure, size and density of Ge dot on Si (100) through multistep procedure
Wakayama Y, Gerth G, Werner P, Gosele U, Sokolov LV
Journal of Crystal Growth, 231(4), 474, 2001 |
| 10 |
Solid solutions GeSi grown by MBE on a low temperature Si(001) buffer layer: specific features of plastic relaxation
Bolkhovityanov YB, Gutakovskii AK, Mashanov VI, Pchelyakov OP, Revenko MA, Sokolov LV
Thin Solid Films, 392(1), 98, 2001 |
