화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Phonon-assisted Zener tunneling in a p-n diode silicon nanowire
Carrillo-Nunez H, Magnus W, Vandenberghe WG, Soree B, Peeters FM
Solid-State Electronics, 79, 196, 2013
2 Modeling the impact of junction angles in tunnel field-effect transistors
Kao KH, Verhulst AS, Vandenberghe WG, Soree B, Groeseneken G, De Meyer K
Solid-State Electronics, 69, 31, 2012
3 Quantum simulations of electrostatics in Si cylindrical junctionless nanowire nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations
Pham AT, Soree B, Magnus W, Jungemann C, Meinerzhagen B, Pourtois G
Solid-State Electronics, 71, 30, 2012
4 Comparison of strained SiGe heterostructure-on-insulator (0 0 1) and (1 1 0) PMOSFETs: C-V characteristics, mobility, and ON current
Pham AT, Zhao QT, Jungemann C, Meinerzhagen B, Mantl S, Soree B, Pourtois G
Solid-State Electronics, 65-66, 64, 2011
5 Quantum transport in a cylindrical sub-0.1 mu m silicon-based MOSFET
Balaban SN, Pokatilov EP, Fomin VM, Gladilin VN, Devreese JT, Magnus W, Schoenmaker W, Van Rossum M, Soree B
Solid-State Electronics, 46(3), 435, 2002