| 1 |
The causes of GaN HEMT bell-shaped transconductance degradation
Chen CH, Sadler R, Wang DV, Hou D, Yang YF, Yau W, Sutton W, Shim J, Wang SG, Duong A
Solid-State Electronics, 126, 115, 2016 |
| 2 |
On the extraction of the external drain and source resistors and effective channel length in Si-MOSFET
Joodaki M
Solid-State Electronics, 111, 1, 2015 |
| 3 |
Modeling and extraction technique for parasitic resistances in MOSFETs Combining DC I-V and low frequency C-V measurement
Shin JS, Bae H, Hong E, Jang J, Yun D, Lee J, Kim DH, Kim DM
Solid-State Electronics, 72, 78, 2012 |
| 4 |
Influence of temperature and drain current on source and drain resistances in AlGaN/GaN HEMTs
Cuerdo R, Calle F
Solid-State Electronics, 63(1), 184, 2011 |
| 5 |
An extended drain current conductance extraction method and its application to DRAM support and array devices
Joodaki M
Solid-State Electronics, 53(9), 1020, 2009 |
| 6 |
A voltage-dependent channel length extraction method for MOSFET's
Joodaki M
Solid-State Electronics, 50(11-12), 1787, 2006 |
| 7 |
Modeling and extraction of gate bias-dependent parasitic source and drain resistances in MOSFETs
Kim DM, Kim HC, Kim HT
Solid-State Electronics, 47(10), 1707, 2003 |
| 8 |
Source resistance analysis of SiC-MESFET
Arai M, Ogata M, Honda H, Sawazaki H, Nakagawa A, Kitamura M
Materials Science Forum, 353-356, 711, 2001 |
