| 1 |
Analysis of interfaces in Bornite (Cu5FeS4) fabricated Schottky diode using impedance spectroscopy method and its photosensitive behavior
Sil S, Dey A, Datta J, Das M, Jana R, Halder S, Dhar J, Sanyal D, Ray PP
Materials Research Bulletin, 106, 337, 2018 |
| 2 |
Performance improvement of perovskite solar cells using electron and hole transport layers
Chen GS, Chen YC, Lee CT, Lee HY
Solar Energy, 174, 897, 2018 |
| 3 |
Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p(+)-Si memory device
Kim TH, Kim S, Kim H, Kim MH, Bang S, Cho S, Park BG
Solid-State Electronics, 140, 51, 2018 |
| 4 |
Gradual bipolar resistive switching in Ni/Si3N4/n(+)-Si resistive-switching memory device for high-density integration and low-power applications
Kim S, Jung S, Kim MH, Cho S, Park BG
Solid-State Electronics, 114, 94, 2015 |
| 5 |
Current-voltage characteristics of Al/Rhodamine-101/n-GaAs structures in the wide temperature range
Vural O, Safak Y, Altindal S, Turut A
Current Applied Physics, 10(3), 761, 2010 |
