검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
High-resolution in situ and ex situ TEM studies on graphene formation and growth on Pt nanoparticles Peng ZM, Somodi F, Helveg S, Kisielowski C, Specht P, Bell AT Journal of Catalysis, 286, 22, 2012 |
| 2 |
Zincblende and wurtzite phases in InN epilayers and their respective band transitions Specht P, Ho JC, Xu X, Armitage R, Weber ER, Erni E, Kisielowski C Journal of Crystal Growth, 288(2), 225, 2006 |
| 3 |
The influence of structural properties on conductivity and luminescence of MBE grown InN Specht P, Armitage R, Ho J, Gunawan E, Yang Q, Xu X, Kisielowski C, Weber ER Journal of Crystal Growth, 269(1), 111, 2004 |
| 4 |
Impact of beryllium dopants on the stability of LT-grown AlAs/GaAs : Be heterostructures against thermally activated intermixing Tillmann K, Luysberg M, Specht P, Weber ER Thin Solid Films, 437(1-2), 74, 2003 |
| 5 |
Strain relaxation and dislocation filtering in metamorphic high electron mobility transistor structures grown on GaAs substrates Lubyshev D, Liu WK, Stewart TR, Cornfeld AB, Fang XM, Xu X, Specht P, Kisielowski C, Naidenkova M, Goorsky MS, Whelan CS, Hoke WE, Marsh PF, Millunchick JM, Svensson SP Journal of Vacuum Science & Technology B, 19(4), 1510, 2001 |
| 6 |
Analysis of twin defects in GaAs(111)B molecular beam epitaxy growth Park Y, Cich MJ, Zhao R, Specht P, Weber ER, Stach E, Nozaki S Journal of Vacuum Science & Technology B, 18(3), 1566, 2000 |
| 7 |
Properties of carbon-doped low-temperature GaAs and InP grown by solid-source molecular-beam epitaxy using CBr4 Liu WK, Lubyshev DI, Specht P, Zhao R, Weber ER, Gebauer J, SpringThorpe AJ, Streater RW, Vijarnwannaluk S, Songprakob W, Zallen R Journal of Vacuum Science & Technology B, 18(3), 1594, 2000 |
| 8 |
Improvement of molecular beam epitaxy-grown low-temperature GaAs through p doping with Be and C Specht P, Lutz RC, Zhao R, Weber ER, Liu WK, Bacher K, Towner FJ, Stewart TR, Luysberg M Journal of Vacuum Science & Technology B, 17(3), 1200, 1999 |