검색결과 : 21건
| No. | Article |
|---|---|
| 1 |
Design and optimization of radioisotope sources for betavoltaic batteries Alam TR, Spencer MG, Prelas MA, Pierson MA International Journal of Energy Research, 42(7), 2564, 2018 |
| 2 |
CVD growth of SiC on sapphire substrate and graphene formation from the epitaxial SiC Hwang J, Kim M, Shields VB, Spencer MG Journal of Crystal Growth, 366, 26, 2013 |
| 3 |
Gallium nitride powders: Mechanism of ammonothermal synthesis, ball-mill assisted rare earth doping and uniform electrophoretic deposition Thomas T, Guo XM, Shi JX, Lepak LA, Chandrashekhar MVS, Li KW, DiSalvo FJ, Spencer MG Journal of Crystal Growth, 316(1), 90, 2011 |
| 4 |
Oriented 2D Covalent Organic Framework Thin Films on Single-Layer Graphene Colson JW, Woll AR, Mukherjee A, Levendorf MP, Spitler EL, Shields VB, Spencer MG, Park J, Dichtel WR Science, 332(6026), 228, 2011 |
| 5 |
Epitaxial growth of graphitic carbon on C-face SiC and sapphire by chemical vapor deposition (CVD) Hwang JH, Shields VB, Thomas CI, Shivaraman S, Hao D, Kim MY, Woll AR, Tompa GS, Spencer MG Journal of Crystal Growth, 312(21), 3219, 2010 |
| 6 |
Purification and mechanical nanosizing of Eu-doped GaN Thomas T, Guo XM, Chandrashekhar MVS, Poitras CB, Shaff W, Dreibelbis M, Reiherzer J, Li KW, DiSalvo FJ, Lipson M, Spencer MG Journal of Crystal Growth, 311(19), 4402, 2009 |
| 7 |
Effect of growth temperature on Eu incorporation in GaN powders Shi JX, Chandrashekhar MVS, Relherzer J, Schaff WJ, Lu J, Disalvo FJ, Spencer MG Journal of Crystal Growth, 310(2), 452, 2008 |
| 8 |
C-doped semi-insulating GaNHFETs on sapphire substrates with a high breakdown voltage and low specific on-resistance Choi YC, Shi J, Pophristic M, Spencer MG, Eastman LF Journal of Vacuum Science & Technology B, 25(6), 1836, 2007 |
| 9 |
Separation characteristics of on-chip biopolymer membranes Mohamed H, Russo AP, Szarowski DH, McDonnell E, Lepak LA, Spencer MG, Martin DL, Caggana M, Turner JN Separation Science and Technology, 42(1), 25, 2007 |
| 10 |
Crystal growth and characterization of thick GaN layers grown by oxide vapor transport technique Konkapaka P, Raghothamachar B, Dudley M, Makarov Y, Spencer MG Journal of Crystal Growth, 289(1), 140, 2006 |