화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Control of Mg doping of GaN in RF-plasma molecular beam epitaxy
Feduniewicz A, Skierbiszewski C, Siekacz M, Wasilewski ZR, Sproule I, Grzanka S, Jakiela R, Borysiuk J, Kamler G, Litwin-Staszewska E, Czernecki R, Bockowski M, Porowski S
Journal of Crystal Growth, 278(1-4), 443, 2005
2 Ammonia molecular beam epitaxy growth of p-type GaN and application to bipolar junction transistors
Haffouz S, Tang H, Bardwell JA, Rolfe S, Hsu EM, Sproule I, Moisa S, Beaulieu M, Webb JB
Journal of Vacuum Science & Technology B, 23(3), 1199, 2005
3 Characterization of diamond-like carbon by Raman spectroscopy, XPS and optical constants
Mossner C, Grant P, Tran H, Clarke G, Lockwood DJ, Labbe HJ, Mason B, Sproule I
Thin Solid Films, 317(1-2), 397, 1998